Titill: | All-optical band engineering of gapped Dirac materials |
Höfundur: |
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Útgáfa: | 2017-03-01 |
Tungumál: | Enska |
Umfang: | 125401 |
Háskóli/Stofnun: | Háskóli Íslands University of Iceland |
Svið: | Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) |
Deild: | Raunvísindastofnun (HÍ) Science Institute (UI) |
Birtist í: | Physical Review B;95(12) |
ISSN: | 2469-9950 2469-9969 (eISSN) |
DOI: | 10.1103/PhysRevB.95.125401 |
Efnisorð: | Band gap; Electronic structure; Valleytronics; Graphene; Transition-metal dichalcogenide; Condensed Matter & Materials Physics; Þéttefnisfræði; Rafeindir; Rafsegulfræði |
URI: | https://hdl.handle.net/20.500.11815/1037 |
Tilvitnun:Kibis, O. V., Dini, K., Iorsh, I. V., & Shelykh, I. A. (2017). All-optical band engineering of gapped Dirac materials. Physical Review B, 95(12), 125401. doi:10.1103/PhysRevB.95.125401
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Útdráttur:We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.
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Athugasemdir:Publisher's version (útgefin grein)
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