dc.contributor |
Háskóli Íslands |
dc.contributor |
University of Iceland |
dc.contributor.author |
Kibis, Oleg |
dc.contributor.author |
Dini, Kevin Tanguy Elian |
dc.contributor.author |
Iorsh, Ivan |
dc.contributor.author |
Shelykh, Ivan |
dc.date.accessioned |
2019-03-06T10:22:39Z |
dc.date.available |
2019-03-06T10:22:39Z |
dc.date.issued |
2017-03-01 |
dc.identifier.citation |
Kibis, O. V., Dini, K., Iorsh, I. V., & Shelykh, I. A. (2017). All-optical band engineering of gapped Dirac materials. Physical Review B, 95(12), 125401. doi:10.1103/PhysRevB.95.125401 |
dc.identifier.issn |
2469-9950 |
dc.identifier.issn |
2469-9969 (eISSN) |
dc.identifier.uri |
https://hdl.handle.net/20.500.11815/1037 |
dc.description |
Publisher's version (útgefin grein) |
dc.description.abstract |
We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications. |
dc.description.sponsorship |
The work was partially supported by the RISE project
CoExAN, FP7 ITN project NOTEDEV, RFBR projects 16-
32-60123 and 17-02-00053, the Rannis projects 141241-051
and 163082-051, and the Ministry of Education and Science
of the Russian Federation (projects 3.1365.2017, 3.2614.2017,
and 3.4573.2017). O.V.K. and I.V.I. acknowledge support from
the Ministry of Education—Singapore, AcRF Tier 2 Grant No.
MOE2015-T2-1-055. |
dc.format.extent |
125401 |
dc.language.iso |
en |
dc.publisher |
American Physical Society (APS) |
dc.relation |
info:eu-repo/grantAgreement/EC/FP7/607521 |
dc.relation.ispartofseries |
Physical Review B;95(12) |
dc.rights |
info:eu-repo/semantics/openAccess |
dc.subject |
Band gap |
dc.subject |
Electronic structure |
dc.subject |
Valleytronics |
dc.subject |
Graphene |
dc.subject |
Transition-metal dichalcogenide |
dc.subject |
Condensed Matter & Materials Physics |
dc.subject |
Þéttefnisfræði |
dc.subject |
Rafeindir |
dc.subject |
Rafsegulfræði |
dc.title |
All-optical band engineering of gapped Dirac materials |
dc.type |
info:eu-repo/semantics/article |
dc.description.version |
Peer Reviewed |
dc.identifier.journal |
Physical Review B |
dc.identifier.doi |
10.1103/PhysRevB.95.125401 |
dc.contributor.department |
Raunvísindastofnun (HÍ) |
dc.contributor.department |
Science Institute (UI) |
dc.contributor.school |
Verkfræði- og náttúruvísindasvið (HÍ) |
dc.contributor.school |
School of Engineering and Natural Sciences (UI) |