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All-optical band engineering of gapped Dirac materials

All-optical band engineering of gapped Dirac materials

Title: All-optical band engineering of gapped Dirac materials
Author: Kibis, Oleg   orcid.org/0000-0003-3367-9980
Dini, Kevin Tanguy Elian
Iorsh, Ivan   orcid.org/0000-0003-4992-6122
Shelykh, Ivan
Date: 2017-03-01
Language: English
Scope: 125401
University/Institute: Háskóli Íslands
University of Iceland
School: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Department: Raunvísindastofnun (HÍ)
Science Institute (UI)
Series: Physical Review B;95(12)
ISSN: 2469-9950
2469-9969 (eISSN)
DOI: 10.1103/PhysRevB.95.125401
Subject: Band gap; Electronic structure; Valleytronics; Graphene; Transition-metal dichalcogenide; Condensed Matter & Materials Physics; Þéttefnisfræði; Rafeindir; Rafsegulfræði
URI: https://hdl.handle.net/20.500.11815/1037

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Kibis, O. V., Dini, K., Iorsh, I. V., & Shelykh, I. A. (2017). All-optical band engineering of gapped Dirac materials. Physical Review B, 95(12), 125401. doi:10.1103/PhysRevB.95.125401


We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.


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