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Electron-photonic topological states on the surface of a bulk semiconductor driven by a high-frequency field
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| Titill: | Electron-photonic topological states on the surface of a bulk semiconductor driven by a high-frequency field |
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| Útgáfa: | 2020-03-23 |
| Tungumál: | Enska |
| Umfang: | 012063 |
| Háskóli/Stofnun: | Háskóli Íslands University of Iceland |
| Svið: | Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) |
| Deild: | Raunvísindastofnun (HÍ) Science Institute (UI) |
| Birtist í: | Journal of Physics: Conference Series;1461(1) |
| ISSN: | 1742-6588 1742-6596 (eISSN) |
| DOI: | 10.1088/1742-6596/1461/1/012063 |
| Efnisorð: | Electromagnetic fields; Mercury compounds; Topology; HgTe; Segulmagn; Hálfleiðarar |
| URI: | https://hdl.handle.net/20.500.11815/2372 |
Tilvitnun:O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 012063
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Útdráttur:It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion. Thus, the light-induced topological phase transition in the semiconductor appears. The structure of the found surface states is studied both analytically and numerically in the broad range of their parameters.
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Athugasemdir:Publisher's version (útgefin grein)
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Leyfi:Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distributionof this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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