Titill: | Electrical characterization of high k-dielectrics for 4H-SiC MIS devices |
Höfundur: |
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Útgáfa: | 2019-08-01 |
Tungumál: | Enska |
Umfang: | 55-58 |
Háskóli/Stofnun: | Háskóli Íslands University of Iceland |
Svið: | Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) |
Deild: | Science Institute (UI) Raunvísindastofnun (HÍ) |
Birtist í: | Materials Science in Semiconductor Processing;98 |
ISSN: | 1369-8001 |
DOI: | 10.1016/j.mssp.2019.03.025 |
Efnisorð: | Al 2 O 3 /4H-SiC interface; AlN/4H-SiC interface; Interface traps; MIS structure; Raffræði; Rafeindafræði |
URI: | https://hdl.handle.net/20.500.11815/1669 |
Útdráttur:We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.
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Athugasemdir:Publisher's version (útgefin grein)
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Leyfi:This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/).
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