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Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Title: Electrical characterization of high k-dielectrics for 4H-SiC MIS devices
Author: Khosa, Rabia Yasmin
Chen, J.T.
Winters, M.
Pálsson, Kjartan
Karhu, R.
Hassan, J.
Rorsman, N.
Sveinbjörnsson, Einar   orcid.org/0000-0003-4474-5293
Date: 2019-08-01
Language: English
Scope: 55-58
University/Institute: Háskóli Íslands
University of Iceland
School: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Department: Science Institute (UI)
Raunvísindastofnun (HÍ)
Series: Materials Science in Semiconductor Processing;98
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2019.03.025
Subject: Al 2 O 3 /4H-SiC interface; AlN/4H-SiC interface; Interface traps; MIS structure; Raffræði; Rafeindafræði
URI: https://hdl.handle.net/20.500.11815/1669

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We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.


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This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/).

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