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Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

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dc.contributor Háskóli Íslands
dc.contributor University of Iceland
dc.contributor.author Khosa, Rabia Yasmin
dc.contributor.author Chen, J.T.
dc.contributor.author Winters, M.
dc.contributor.author Pálsson, Kjartan
dc.contributor.author Karhu, R.
dc.contributor.author Hassan, J.
dc.contributor.author Rorsman, N.
dc.contributor.author Sveinbjörnsson, Einar
dc.date.accessioned 2020-03-27T12:34:12Z
dc.date.available 2020-03-27T12:34:12Z
dc.date.issued 2019-08-01
dc.identifier.issn 1369-8001
dc.identifier.uri https://hdl.handle.net/20.500.11815/1669
dc.description Publisher's version (útgefin grein)
dc.description.abstract We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.
dc.description.sponsorship This work was financially supported by The Icelandic Research Fund. We also acknowledge support from the Swedish Foundation for Strategic Research ( SSF ), and the Knut and Alice Wallenberg Foundation (KAW).
dc.format.extent 55-58
dc.language.iso en
dc.publisher Elsevier BV
dc.relation.ispartofseries Materials Science in Semiconductor Processing;98
dc.rights info:eu-repo/semantics/openAccess
dc.subject Al 2 O 3 /4H-SiC interface
dc.subject AlN/4H-SiC interface
dc.subject Interface traps
dc.subject MIS structure
dc.subject Raffræði
dc.subject Rafeindafræði
dc.title Electrical characterization of high k-dielectrics for 4H-SiC MIS devices
dc.type info:eu-repo/semantics/article
dcterms.license This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/).
dc.description.version Peer Reviewed
dc.identifier.journal Materials Science in Semiconductor Processing
dc.identifier.doi 10.1016/j.mssp.2019.03.025
dc.contributor.department Science Institute (UI)
dc.contributor.department Raunvísindastofnun (HÍ)
dc.contributor.school Verkfræði- og náttúruvísindasvið (HÍ)
dc.contributor.school School of Engineering and Natural Sciences (UI)

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