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Reduction of energy cost of magnetization switching in a biaxial nanoparticle by use of internal dynamics

Reduction of energy cost of magnetization switching in a biaxial nanoparticle by use of internal dynamics


Titill: Reduction of energy cost of magnetization switching in a biaxial nanoparticle by use of internal dynamics
Höfundur: Badarneh, Mohammad H. A.
Kwiatkowski, Grzegorz
Bessarab, Pavel
Útgáfa: 2023-06-29
Tungumál: Enska
Umfang: 214448
Háskóli/Stofnun: Háskóli Íslands
University of Iceland
Svið: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Deild: Raunvísindastofnun (HÍ)
Science Institute (UI)
Birtist í: Physical Review B;107
ISSN: 2469-9950
2469-9969
DOI: https://doi.org/10.1103/PhysRevB.107.214448
Efnisorð: Optimal control; Magnetization switching; Kjörreglun; Segulmögnun
URI: https://hdl.handle.net/20.500.11815/5468

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Tilvitnun:

Badarneh, M.H.A., Kwiatkowski, G.J. & Bessarab, P.F. (2023). Reduction of energy cost of magnetization switching in a biaxial nanoparticle by use of internal dynamics. Physical Review B, 107(21), 214448. https://doi.org/10.1103/PhysRevB.107.214448

Útdráttur:

A solution to energy-efficient magnetization switching in a nanoparticle with biaxial anisotropy is presented. Optimal control paths minimizing the energy cost of magnetization reversal are calculated numerically as functions of the switching time and materials properties, and used to derive energy-efficient switching pulses of external magnetic field. Hard-axis anisotropy reduces the minimum energy cost of magnetization switching due to the internal torque in the desired switching direction. Analytical estimates quantifying this effect are obtained based on the perturbation theory. The optimal switching time providing a tradeoff between fast switching and energy efficiency is obtained. The energy cost of switching and the energy barrier between the stable states can be controlled independently in a biaxial nanomagnet. This provides a solution to the dilemma between energy-efficient writability and good thermal stability of magnetic memory elements.

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