dc.contributor |
Reykjavik University |
dc.contributor |
Háskólinn í Reykjavík |
dc.contributor |
University of Iceland |
dc.contributor |
Háskóli Íslands |
dc.contributor.author |
Aghabalaei Fakhri, Elham |
dc.contributor.author |
Plugaru, Rodica |
dc.contributor.author |
Sultan, Muhammad Taha |
dc.contributor.author |
Kristinsson, Thorsteinn |
dc.contributor.author |
Árnason, Hákon Örn |
dc.contributor.author |
Plugaru, Neculai |
dc.contributor.author |
Manolescu, Andrei |
dc.contributor.author |
Ingvarsson, Snorri |
dc.contributor.author |
Svavarsson, Halldor |
dc.date.accessioned |
2023-02-22T11:17:32Z |
dc.date.available |
2023-02-22T11:17:32Z |
dc.date.issued |
2022-08-23 |
dc.identifier.citation |
Fakhri, E.; Plugaru, R.; Sultan, M.T.; Hanning Kristinsson, T.; Örn Árnason, H.; Plugaru, N.; Manolescu, A.; Ingvarsson, S.; Svavarsson, H.G. Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation. Sensors 2022, 22, 6340. https://doi.org/10.3390/ s22176340 |
dc.identifier.issn |
1424-8220 |
dc.identifier.uri |
https://hdl.handle.net/20.500.11815/4023 |
dc.description |
Publisher's version (útgefin grein) |
dc.description.abstract |
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making
them suitable for various sensing applications. Here, we report the results of a PZR investigation
on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor.
The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching
process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V
characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit
increased mechanical stability in comparison with separated or periodic nanowires. The repeatability
of the fabrication process and statistical distribution of measurements were also tested on several
samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed
with uniaxial force application, and more than two orders of magnitude resistance variation were
determined for isostatic pressure below atmospheric pressure. |
dc.description.sponsorship |
Reykjavík University |
dc.format.extent |
6340 |
dc.language.iso |
en |
dc.publisher |
MDPI AG |
dc.relation |
Reykjavik University Ph.D. fund no. 220006 |
dc.relation.ispartofseries |
Sensors;22(17) |
dc.rights |
info:eu-repo/semantics/openAccess |
dc.subject |
Electrical and Electronic Engineering |
dc.subject |
Biochemistry |
dc.subject |
Instrumentation |
dc.subject |
Atomic and Molecular Physics |
dc.subject |
Optics |
dc.subject |
Analytical Chemistry |
dc.subject |
Silicon nanowires |
dc.subject |
MACE |
dc.subject |
Piezoresistivity |
dc.subject |
Rafmagnsverkfræði |
dc.subject |
Rafeindaverkfræði |
dc.subject |
Lífefnafræði |
dc.subject |
Tækjafræði |
dc.subject |
Atómfræði |
dc.subject |
Sameindafræði |
dc.subject |
Ljósfræði |
dc.subject |
Efnafræði |
dc.subject |
Nanótækni |
dc.subject |
Kísill |
dc.title |
Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation |
dc.type |
info:eu-repo/semantics/article |
dcterms.license |
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
dc.description.version |
Peer reviewed |
dc.identifier.doi |
10.3390/s22176340 |
dc.relation.url |
https://www.mdpi.com/1424-8220/22/17/6340/pdf |
dc.contributor.department |
Department of Engineering (RU) |
dc.contributor.department |
Verkfræðideild (HR) |
dc.contributor.school |
School of Technology (RU) |
dc.contributor.school |
Tæknisvið (HR) |
dc.contributor.school |
Science Institute (UI) |
dc.contributor.school |
Raunvísindastofnun (HÍ) |