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Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Title: Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation
Author: Aghabalaei Fakhri, Elham
Plugaru, Rodica
Sultan, Muhammad Taha
Kristinsson, Thorsteinn   orcid.org/0000-0001-7258-9844
Árnason, Hákon Örn   orcid.org/0000-0002-6074-6598
Plugaru, Neculai
Manolescu, Andrei   orcid.org/0000-0002-0713-4664
Ingvarsson, Snorri   orcid.org/0000-0001-8397-8917
Svavarsson, Halldor   orcid.org/0000-0002-1729-4098
Date: 2022-08-23
Language: English
Scope: 6340
University/Institute: Reykjavik University
Háskólinn í Reykjavík
University of Iceland
Háskóli Íslands
School: School of Technology (RU)
Tæknisvið (HR)
Science Institute (UI)
Raunvísindastofnun (HÍ)
Department: Department of Engineering (RU)
Verkfræðideild (HR)
Series: Sensors;22(17)
ISSN: 1424-8220
DOI: 10.3390/s22176340
Subject: Electrical and Electronic Engineering; Biochemistry; Instrumentation; Atomic and Molecular Physics; Optics; Analytical Chemistry; Silicon nanowires; MACE; Piezoresistivity; Rafmagnsverkfræði; Rafeindaverkfræði; Lífefnafræði; Tækjafræði; Atómfræði; Sameindafræði; Ljósfræði; Efnafræði; Nanótækni; Kísill
URI: https://hdl.handle.net/20.500.11815/4023

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Fakhri, E.; Plugaru, R.; Sultan, M.T.; Hanning Kristinsson, T.; Örn Árnason, H.; Plugaru, N.; Manolescu, A.; Ingvarsson, S.; Svavarsson, H.G. Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation. Sensors 2022, 22, 6340. https://doi.org/10.3390/ s22176340


Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.


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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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