Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni<sub>80</sub>Fe<sub>20</sub>thin films deposited on MgO (001) substrates

Sultan, Muhammad Taha; Tryggvason, Ásgeir; Arnalds, Unnar; Ingvarsson, Snorri

dc.contributor	Háskóli Íslands
dc.contributor	University of Iceland
dc.contributor.author	Sultan, Muhammad Taha
dc.contributor.author	orcid.org/0000-0002-0327-9989 Tryggvason, Ásgeir
dc.contributor.author	orcid.org/0000-0002-5988-917X Arnalds, Unnar
dc.contributor.author	orcid.org/0000-0001-8397-8917 Ingvarsson, Snorri
dc.date.accessioned	2023-01-30T14:39:01Z
dc.date.available	2023-01-30T14:39:01Z
dc.date.issued	2022-10-12
dc.identifier.citation	M. T. Sultan, A. Tryggvason, U. B. Arnalds and S. Ingvarsson, "Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates," 2022 International Semiconductor Conference (CAS), Poiana Brasov, Romania, 2022, pp. 173-176, doi: 10.1109/CAS56377.2022.9934537.
dc.identifier.isbn	9781665452557 (eISBN)
dc.identifier.issn	2377-0678 (eISSN)
dc.identifier.uri	https://hdl.handle.net/20.500.11815/3930
dc.description.abstract	This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct current magnetron sputtering on MgO(001) and MgO(001)\|\|VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ∼0.8 Gauss along the easy directions. Incorporating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain.
dc.description.sponsorship	This work was supported by funding from the Icelandic Research Fund Grant Nos. 218029–051, 228951–051 and 207111–051.
dc.format.extent	173-176
dc.language.iso	en
dc.publisher	IEEE
dc.relation.ispartofseries	International Semiconductor Conference (CAS);2022
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	MOKE
dc.subject	Magnetic anisotropy
dc.title	Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni<sub>80</sub>Fe<sub>20</sub>thin films deposited on MgO (001) substrates
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.version	Peer Reviewed
dc.identifier.journal	International Semiconductor Conference (CAS)
dc.identifier.doi	10.1109/CAS56377.2022.9934537
dc.relation.url	http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934537.pdf?arnumber=9934537
dc.contributor.department	Raunvísindastofnun (HÍ)
dc.contributor.department	Science Institute (UI)
dc.contributor.school	Verkfræði- og náttúruvísindasvið (HÍ)
dc.contributor.school	School of Engineering and Natural Sciences (UI)