Titill: | Floquet engineering of 2D materials |
Höfundur: |
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Útgáfa: | 2020-04-23 |
Tungumál: | Enska |
Umfang: | 012064 |
Háskóli/Stofnun: | Háskóli Íslands University of Iceland |
Svið: | Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) |
Deild: | Raunvísindastofnun (HÍ) Science Institute (UI) |
Birtist í: | Journal of Physics: Conference Series;1461(1) |
ISSN: | 1742-6588 1742-6596 (eISSN) |
DOI: | 10.1088/1742-6596/1461/1/012064 |
Efnisorð: | Electromagnetic fields; 2D materials; Electrons; Segulmagn; Rafeindir |
URI: | https://hdl.handle.net/20.500.11815/2373 |
Tilvitnun:O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 012064
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Útdráttur:We demonstrate theoretically that the interaction of electrons in the 2D materials (gapped graphene and transition metal dichalchogenide monolayer) with a strong off-resonant electromagnetic field substantially renormalizes their band structure, including the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the field can serve an effective tool to control spin and valley properties of the 2D materials and be potentially exploited in optoelectronic applications.
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Athugasemdir:Publisher's version (útgefin grein)
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Leyfi:Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distributionof this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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