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Floquet engineering of 2D materials

Floquet engineering of 2D materials

Title: Floquet engineering of 2D materials
Author: Kibis, O. V.
Iorsh, I. V.
Shelykh, Ivan   orcid.org/0000-0001-5393-821X
Date: 2020-04-23
Language: English
Scope: 012064
University/Institute: Háskóli Íslands
University of Iceland
School: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Department: Raunvísindastofnun (HÍ)
Science Institute (UI)
Series: Journal of Physics: Conference Series;1461(1)
ISSN: 1742-6588
1742-6596 (eISSN)
DOI: 10.1088/1742-6596/1461/1/012064
Subject: Electromagnetic fields; 2D materials; Electrons; Segulmagn; Rafeindir
URI: https://hdl.handle.net/20.500.11815/2373

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O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 012064


We demonstrate theoretically that the interaction of electrons in the 2D materials (gapped graphene and transition metal dichalchogenide monolayer) with a strong off-resonant electromagnetic field substantially renormalizes their band structure, including the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the field can serve an effective tool to control spin and valley properties of the 2D materials and be potentially exploited in optoelectronic applications.


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