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Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

Title: Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study
Author: Sultan, Muhammad Taha
Maraloiu, Adrian Valentin
Stavarache, Ionel
Gudmundsson, Jon Tomas   orcid.org/0000-0002-8153-3209
Manolescu, Andrei   orcid.org/0000-0002-0713-4664
Teodorescu, Valentin Serban
Ciurea, Magdalena Lidia
Svavarsson, Halldor   orcid.org/0000-0002-1729-4098
Date: 2019-09-17
Language: English
Scope: 1873-1882
University/Institute: Háskólinn í Reykjavík
Reykjavik University
Háskóli Íslands
University of Iceland
School: Tæknisvið (HR)
School of Technology (RU)
Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Department: Verkfræðideild (HR)
Department of Engineering (RU)
Raunvísindastofnun (HÍ)
Science Institute (UI)
ISSN: 2190-4286
DOI: 10.3762/bjnano.10.182
Subject: Electrical and Electronic Engineering; General Physics and Astronomy; General Materials Science; Grazing incidence XRD (GIXRD); High-power impulse magnetron sputtering (HiPIMS); HRTEM; Magnetron sputtering; Photocurrent spectra; SiGe nanocrystals; SiO2/SiGe/SiO2 multilayers; STEM-HAADF; TEM; Enhanced photoconductivity; Quantum dots; Photoluminescence; Nanoparticles; Rafeindaverkfræði; Eðlisfræði; Efnafræði; Nanótækni; Ljósfræði; Rafeindir; Smásjár; Litróf; Frumefni; Efnasambönd; Kísill; German (frumefni); Súrefni
URI: https://hdl.handle.net/20.500.11815/1874

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Sultan, M. T., Maraloiu, A. V., Stavarache, I., Gudmundsson, J. T., Manolescu, A., Teodorescu, V. S., Ciurea, M. L., & Svavarsson, H. G. (2019). Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: A comparative study. Beilstein Journal of Nanotechnology, 10, 1873–1882. https://doi.org/10.3762/bjnano.10.182


Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550-900 degrees C for 1 min) in N-2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nanoparticles (2.1 +/- 0.8 nm) in the as-grown structure, and that presence of such nanoparticles acts as a seed for heterogeneous nucleation, which upon annealing results in the periodically arranged columnar self-assembly of SiGe core-shell nanocrystals. An increase in photocurrent intensity by more than an order of magnitude was achieved by annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequential interface characteristics and its effect on the photocurrent spectra.


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