Exciton-exciton interaction in transition-metal dichalcogenide monolayers

dc.contributorHáskóli Íslandsen_US
dc.contributorUniversity of Icelanden_US
dc.contributor.authorShahnazaryan, Vanik
dc.contributor.authorIorsh, Ivan
dc.contributor.authorShelykh, Ivan
dc.contributor.authorKyriienko, O.
dc.contributor.departmentRaunvísindastofnun (HÍ)en_US
dc.contributor.departmentScience Institute (UI)en_US
dc.contributor.schoolVerkfræði- og náttúruvísindasvið (HÍ)en_US
dc.contributor.schoolSchool of Engineering and Natural Sciences (UI)en_US
dc.date.accessioned2019-03-06T10:36:55Z
dc.date.available2019-03-06T10:36:55Z
dc.date.issued2017-09-06
dc.descriptionPublisher's version (útgefin grein)en_US
dc.description.abstractWe study theoretically the Coulomb interaction between excitons in transition metal dichalcogenide (TMD) monolayers. We calculate direct and exchange interaction for both ground and excited states of excitons. The screening of the Coulomb interaction, specific to monolayer structures, leads to the unique behavior of the exciton-exciton scattering for excited states, characterized by the nonmonotonic dependence of the interaction as function of the transferred momentum. We find that the nontrivial screening enables the description of TMD exciton interaction strength by approximate formula which includes exciton binding parameters. The influence of screening and dielectric environment on the exciton-exciton interaction was studied, showing qualitatively different behavior for ground state and excited states of excitons. Furthermore, we consider exciton-electron interaction, which for the excited states is governed by the dominant attractive contribution of the exchange component, which increases with the excitation number. The results provide a quantitative description of the exciton-exciton and exciton-electron scattering in transition metal dichalcogenides, and are of interest for the design of perspective nonlinear optical devices based on TMD monolayers.en_US
dc.description.sponsorshipThe authors are grateful to D. Gulevich and M. Glazov for fruitful discussions. This work was supported by Icelandic Research Fund, Grant No. 163082-051 and megaGrant No. 14.Y26.31.0015 of the Ministry of Education and Science of Russian Federation. O.K. thanks University of Iceland for the hospitality during the work on the project, and acknowledges the funding by FP7 ERC Grant QIOS (Grant No. 306576). V.S. and I.A.S. acknowledge support from Ministry of Education and Science of Russian Federation, goszadanie Grant No. 3.2614.2017/4.6 and Horizon2020 RISE project CoExAN. I.I. acknowledges the support of the Russian Ministry of Education and Science (Projects No. 3.1365.2017/4.6 and No. 3.8884.2017/8.9), and RFBR Project No. mol-a-dx 16-32-60123.en_US
dc.description.versionPeer Revieweden_US
dc.format.extent115409en_US
dc.identifier.citationShahnazaryan, V., Iorsh, I., Shelykh, I. A., & Kyriienko, O. (2017). Exciton-exciton interaction in transition-metal dichalcogenide monolayers. Physical Review B, 96(11), 115409. doi:10.1103/PhysRevB.96.115409en_US
dc.identifier.doi10.1103/PhysRevB.96.115409
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969 (eISSN)
dc.identifier.journalPhysical Review Ben_US
dc.identifier.urihttps://hdl.handle.net/20.500.11815/1038
dc.language.isoenen_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/306576)en_US
dc.relation.ispartofseriesPhysical Review B;96(11)
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectExcitonsen_US
dc.subjectTransition-metal dichalcogenideen_US
dc.subjectVariational wave functional methodsen_US
dc.subjectCondensed Matter & Materials Physicsen_US
dc.subjectÞéttefnisfræðien_US
dc.subjectRafeindiren_US
dc.subjectRafeindafræðien_US
dc.titleExciton-exciton interaction in transition-metal dichalcogenide monolayersen_US
dc.typeinfo:eu-repo/semantics/articleen_US

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