Optically induced Lifshitz transition in bilayer graphene

dc.contributorHáskóli Íslandsen_US
dc.contributorUniversity of Icelanden_US
dc.contributor.authorIorsh, Ivan
dc.contributor.authorDini, Kevin Tanguy Elian
dc.contributor.authorKibis, Oleg
dc.contributor.authorShelykh, Ivan
dc.contributor.departmentRaunvísindastofnun (HÍ)en_US
dc.contributor.departmentScience Institute (UI)en_US
dc.contributor.schoolVerkfræði- og náttúruvísindasvið (HÍ)en_US
dc.contributor.schoolSchool of Engineering and Natural Sciences (UI)en_US
dc.date.accessioned2019-03-06T13:09:25Z
dc.date.available2019-03-06T13:09:25Z
dc.date.issued2017-10-11
dc.descriptionPublisher's version (útgefin grein)en_US
dc.description.abstractIt is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition—the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply connected Fermi surface to the doubly connected one, whereas the circularly polarized field induces the multicritical point where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates a physical basis to control the electronic properties of bilayer graphene with light.en_US
dc.description.sponsorshipThe research was partially supported by RISE Program (Project CoExAN), FP7 ITN Program (Project NOTEDEV), Russian Foundation for Basic Research (Project No. 17-02- 00053), Rannis Project No. 163082-051, and Ministry of Education and Science of Russian Federation (Projects No. 3.4573.2017/6.7, No. 3.2614.2017/4.6, No. 3.1365.2017/4.6, No. 3.8884.2017/8.9, and No. 14.Y26.31.0015)en_US
dc.description.versionPeer Revieweden_US
dc.format.extent155432en_US
dc.identifier.citationIorsh, I. V., Dini, K., Kibis, O. V., & Shelykh, I. A. (2017). Optically induced Lifshitz transition in bilayer graphene. Physical Review B, 96(15), 155432. doi:10.1103/PhysRevB.96.155432en_US
dc.identifier.doi10.1103/PhysRevB.96.155432
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969 (eISSN)
dc.identifier.journalPhysical Review Ben_US
dc.identifier.urihttps://hdl.handle.net/20.500.11815/1039
dc.language.isoenen_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/607521en_US
dc.relation.ispartofseriesPhysical Review B;96(15)
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectElectronic structureen_US
dc.subjectFermi surfaceen_US
dc.subjectGrapheneen_US
dc.subjectCondensed Matter & Materials Physicsen_US
dc.subjectÞéttefnisfræðien_US
dc.subjectRafeindafræðien_US
dc.subjectRafeindiren_US
dc.subjectSegulmagnen_US
dc.titleOptically induced Lifshitz transition in bilayer grapheneen_US
dc.typeinfo:eu-repo/semantics/articleen_US

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