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Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms

Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms


Titill: Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms
Höfundur: Zajac, Joanna M.
Erlingsson, Sigurdur I.
Útgáfa: 2016-07-20
Tungumál: Enska
Umfang: 035432/1-035432/7
Háskóli/Stofnun: Háskólinn í Reykjavík
Reykjavik University
Svið: Tækni- og verkfræðideild (HR)
School of Science and Engineering (RU)
Birtist í: Physical Review B;94(3)
ISSN: 2469-9950
2469-9969 (eISSN)
DOI: 10.1103/PhysRevB.94.035432
Efnisorð: Fluorescence; Thermal properties; Interferometry; Flúrljómun; Varmafræði; Mælitæki; Quantom dots
URI: https://hdl.handle.net/20.500.11815/937

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Tilvitnun:

Zajac, J. M., & Erlingsson, S. I. (2016). Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms. Physical Review B, 94(3), 035432. doi.org/10.1103/PhysRevB.94.035432

Útdráttur:

We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s=6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.

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