Opin vísindi

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC


Titill: Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
Höfundur: Khosa, Rabia Yasmin
Þorsteinsson, Einar Baldur
Winters, M.
Rorsman, N.
Karhu, R.
Hassan, J.
Sveinbjörnsson, Einar Örn
Útgáfa: 2018-02
Tungumál: Enska
Umfang: 025304
Háskóli/Stofnun: Háskóli Íslands
University of Iceland
Svið: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Deild: Raunvísindastofnun (HÍ)
Science Institute (UI)
Birtist í: AIP Advances;8(2)
ISSN: 2158-3226
DOI: 10.1063/1.5021411
Efnisorð: Eðlisfræði; Raffræði; SiC MOSFET
URI: https://hdl.handle.net/20.500.11815/752

Skoða fulla færslu

Tilvitnun:

R. Y. Khosa1, E. B. Thorsteinsson, M. Winters, N. Rorsman, R. Karhu, J. Hassan3, and E. Ö. Sveinbjörnsson. Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC. (2018). AIP Advances, 8(2), 025304. doi:10.1063/1.5021411

Útdráttur:

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Leyfi:

All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Skrár

Þetta verk birtist í eftirfarandi safni/söfnum:


Fletta

Um vefinn

Reikningurinn minn