Opin vísindi

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process


Titill: Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process
Höfundur: T P, Ragesh Kumar
Hari, Sangeetha
Damodaran, Krishna Kumar   orcid.org/0000-0002-9741-2997
Ingólfsson, Oddur   orcid.org/0000-0002-7100-9438
Hagen, Cornelis W
Útgáfa: 2017-11-10
Tungumál: Enska
Umfang: 2376-2388
Háskóli/Stofnun: Háskóli Íslands
University of Iceland
Svið: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Deild: Raunvísindadeild (HÍ)
Faculty of Physical Sciences (UI)
Raunvísindastofnun (HÍ)
Science Institute (UI)
Birtist í: Beilstein Journal of Nanotechnology;8
ISSN: 2190-4286
DOI: 10.3762/bjnano.8.237
Efnisorð: Dichlorosilacyclohexane; Dissociative electron attachment; Dissociative ionization; Electrons; Efnafræði; Rafeindir
URI: https://hdl.handle.net/20.500.11815/486

Skoða fulla færslu

Tilvitnun:

P, R. K. T.; Hari, S.; Damodaran, K. K.; Ingólfsson, O.; Hagen, C. W. Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process. Beilstein J. Nanotechnol. 2017, 8, 2376–2388. doi:10.3762/bjnano.8.237

Útdráttur:

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

Leyfi:

This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Skrár

Þetta verk birtist í eftirfarandi safni/söfnum:


Fletta

Um vefinn

Reikningurinn minn