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Simulation of short pulse photoemission in a microdiode with implications for optimal beam brightness

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dc.contributor Háskólinn í Reykjavík
dc.contributor Reykjavik University
dc.contributor.author Árnason, Hákon Örn
dc.contributor.author Torfason, Kristinn
dc.contributor.author Manolescu, Andrei
dc.contributor.author Valfells, Ágúst
dc.date.accessioned 2024-02-14T11:30:05Z
dc.date.available 2024-02-14T11:30:05Z
dc.date.issued 2024
dc.identifier.issn 0018-9383
dc.identifier.issn 1557-9646
dc.identifier.uri https://hdl.handle.net/20.500.11815/4716
dc.description.abstract Molecular dynamics simulations, with full Coulomb interaction, are used to model short-pulse photoemission from a finite area in a microdiode. We demonstrate three emission regimes, source-limited emission, space-charge-limited emission for short pulses, and space-charge-limited emission for the steady state. We show that beam brightness is at a maximum during the transition from the source-limited emission regime to the space-charge-limited emission regime for short pulses. From our simulations, it is apparent that the emitter spot size is an important factor when estimating the critical charge density for short-pulse electron emission and that simple capacitive models may considerably underestimate the total charge emitted.
dc.description.sponsorship Icelandic Research Fund grant number 174512-051 Landsvirkjun energy research fund Reykjavik University doctoral fund
dc.format.extent 1-8
dc.language.iso en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE)
dc.rights info:eu-repo/semantics/openAccess
dc.subject Electrical and Electronic Engineering
dc.subject Electronic, Optical and Magnetic Materials
dc.subject Rafmagnsverkfræði
dc.subject Rafeindaverkfræði
dc.subject Rafsegulfræði
dc.subject Eðlisfræði
dc.title Simulation of short pulse photoemission in a microdiode with implications for optimal beam brightness
dc.type info:eu-repo/semantics/article
dc.description.version Accepted Manuscript
dc.identifier.journal IEEE Transactions on Electron Devices
dc.identifier.doi 10.1109/TED.2024.3351096
dc.relation.url http://xplorestaging.ieee.org/ielx7/16/4358746/10410174.pdf?arnumber=10410174
dc.contributor.department Department of Engineering
dc.contributor.department Verkfræðideild
dc.contributor.school School of Technology
dc.contributor.school Tæknisvið

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