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Photoluminescence study of Si<sub>1-x</sub>Ge<sub>x</sub> nanoparticles in various oxide matrices

Photoluminescence study of Si<sub>1-x</sub>Ge<sub>x</sub> nanoparticles in various oxide matrices


Title: Photoluminescence study of Si<sub>1-x</sub>Ge<sub>x</sub> nanoparticles in various oxide matrices
Author: Sultan, Muhammad Taha
Gudmundsson, J. T.
Manolescu, Andrei   orcid.org/0000-0002-0713-4664
Ciurea, Magdalena Lidia
Svavarsson, Halldor   orcid.org/0000-0002-1729-4098
Ingvarsson, Snorri   orcid.org/0000-0001-8397-8917
Date: 2021-10-06
Language: English
Scope: 21-24
University/Institute: Háskóli Íslands
University of Iceland
School: Verkfræði- og náttúruvísindasvið (HÍ)
School of Engineering and Natural Sciences (UI)
Department: Raunvísindastofnun (HÍ)
Science Institute (UI)
ISBN: 978-1-6654-3571-0 (eISBN)
Series: International Semiconductor Conference (CAS);2021
ISSN: 2377-0678 (eISSN)
DOI: 10.1109/CAS52836.2021.9604131
Subject: Nanótækni; Ljósljómun; Oxíð; Nanoparticles; Photoluminescence
URI: https://hdl.handle.net/20.500.11815/3948

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Citation:

M. T. Sultan, J. T. Gudmundsson, A. Manolescu, M. L. Ciurea, H. G. Svavarsson and S. Ingvarsson, "Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices," 2021 International Semiconductor Conference (CAS), Romania, 2021, pp. 21-24, doi: 10.1109/CAS52836.2021.9604131.

Abstract:

We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at ~907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.

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