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SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

Title: SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Author: Stavarache, Ionel
Logofatu, Constantin
Sultan, Muhammad Taha
Manolescu, Andrei   orcid.org/0000-0002-0713-4664
Svavarsson, Halldor   orcid.org/0000-0002-1729-4098
Teodorescu, Valentin Serban
Ciurea, Magdalena Lidia
Date: 2020-02-24
Language: English
Scope: 3252
University/Institute: Háskólinn í Reykjavík
Reykjavik University
School: Tæknisvið (HR)
School of Technology (RU)
Department: Verkfræðideild (HR)
Department of Engineering (RU)
Series: Scientific Reports;10(1)
ISSN: 2045-2322
DOI: 10.1038/s41598-020-60000-x
Subject: Materials science; Nanoscience and technology; Optics and photonics; Photodetectors; Photosensitivity; Films; SiGe nanocrystals; Efnisfræði; Nanótækni; Ljósfræði; Skammtafræði; Ljósmyndafilmur
URI: https://hdl.handle.net/20.500.11815/2482

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Stavarache, I., Logofatu, C., Sultan, M. T., Manolescu, A., Svavarsson, H. G., Teodorescu, V. S., & Ciurea, M. L. (2020). SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared. Scientific Reports, 10(1), 3252. https://doi.org/10.1038/s41598-020-60000-x


Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 103 times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 °C annealed films to 1210 nm for those at 1000 °C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 °C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW−1.


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