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Fletta eftir höfundi "Kibis, Oleg"

Fletta eftir höfundi "Kibis, Oleg"

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    All-optical band engineering of gapped Dirac materials 
    Kibis, Oleg; Dini, Kevin Tanguy Elian; Iorsh, Ivan; Shelykh, Ivan (American Physical Society (APS), 2017-03-01)
    We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the ...
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    Optically induced Lifshitz transition in bilayer graphene 
    Iorsh, Ivan; Dini, Kevin Tanguy Elian; Kibis, Oleg; Shelykh, Ivan (American Physical Society (APS), 2017-10-11)
    It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition—the abrupt change in the topology of the Fermi ...
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    Periodic array of quantum rings strongly coupled to circularly polarized light as a topological insulator 
    Kozin, Valerii; Iorsh, Ivan; Kibis, Oleg; Shelykh, Ivan (American Physical Society (APS), 2018-01-11)
    We demonstrate theoretically that a strong high-frequency circularly polarized electromagnetic field can turn a two-dimensional periodic array of interconnected quantum rings into a topological insulator. The elaborated approach is applicable to calculate ...
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    Quantum ring with the Rashba spin-orbit interaction in the regime of strong light-matter coupling 
    Kozin, Valerii; Iorsh, Ivan; Kibis, Oleg; Shelykh, Ivan (American Physical Society (APS), 2018-04-26)
    We developed the theory of electronic properties of semiconductor quantum rings with the Rashba spin-orbit interaction irradiated by an off-resonant high-frequency electromagnetic field (dressing field). Within the Floquet theory of periodically driven ...
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    Structure of surface electronic states in strained mercury telluride 
    Kibis, Oleg; Kyriienko, O.; Shelykh, Ivan (IOP Publishing, 2019-04-12)
    We present the theory describing the various surface electronic states arisen from the mixing of conduction and valence bands in a strained mercury telluride (HgTe) bulk material. We demonstrate that the strain-induced band gap in the Brillouin zone ...