Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni<sub>80</sub>Fe<sub>20</sub>thin films deposited on MgO (001) substrates

dc.contributorHáskóli Íslandsen_US
dc.contributorUniversity of Icelanden_US
dc.contributor.authorSultan, Muhammad Taha
dc.contributor.authorTryggvason, Ásgeir
dc.contributor.authorArnalds, Unnar
dc.contributor.authorIngvarsson, Snorri
dc.contributor.departmentRaunvísindastofnun (HÍ)en_US
dc.contributor.departmentScience Institute (UI)en_US
dc.contributor.schoolVerkfræði- og náttúruvísindasvið (HÍ)en_US
dc.contributor.schoolSchool of Engineering and Natural Sciences (UI)en_US
dc.date.accessioned2023-01-30T14:39:01Z
dc.date.available2023-01-30T14:39:01Z
dc.date.issued2022-10-12
dc.description.abstractThis study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct current magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ∼0.8 Gauss along the easy directions. Incorporating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain.en_US
dc.description.sponsorshipThis work was supported by funding from the Icelandic Research Fund Grant Nos. 218029–051, 228951–051 and 207111–051.en_US
dc.description.versionPeer Revieweden_US
dc.format.extent173-176en_US
dc.identifier.citationM. T. Sultan, A. Tryggvason, U. B. Arnalds and S. Ingvarsson, "Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates," 2022 International Semiconductor Conference (CAS), Poiana Brasov, Romania, 2022, pp. 173-176, doi: 10.1109/CAS56377.2022.9934537.en_US
dc.identifier.doi10.1109/CAS56377.2022.9934537
dc.identifier.isbn9781665452557 (eISBN)
dc.identifier.issn2377-0678 (eISSN)
dc.identifier.journalInternational Semiconductor Conference (CAS)en_US
dc.identifier.urihttps://hdl.handle.net/20.500.11815/3930
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesInternational Semiconductor Conference (CAS);2022
dc.relation.urlhttp://xplorestaging.ieee.org/ielx7/9933917/9933992/09934537.pdf?arnumber=9934537en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMOKEen_US
dc.subjectMagnetic anisotropyen_US
dc.titleEffect of VN buffer layer on the magnetic anisotropy of epitaxial Ni<sub>80</sub>Fe<sub>20</sub>thin films deposited on MgO (001) substratesen_US
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US

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