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Fletta eftir titli tímarits "Solid-State Electronics"

Fletta eftir titli tímarits "Solid-State Electronics"

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    Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD 
    Khosa, Rabia Yasmin; Chen, J.T.; Pálsson, Kjartan; Karhu, R.; Hassan, J.; Rorsman, N.; Sveinbjörnsson, Einar (Elsevier BV, 2019-03)
    We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals ...