Háskóli ÍslandsUniversity of IcelandKibis, O. V.Iorsh, I. V.Shelykh, Ivan2021-01-142021-01-142020-04-23O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 0120641742-65881742-6596 (eISSN)https://hdl.handle.net/20.500.11815/2373Publisher's version (útgefin grein)We demonstrate theoretically that the interaction of electrons in the 2D materials (gapped graphene and transition metal dichalchogenide monolayer) with a strong off-resonant electromagnetic field substantially renormalizes their band structure, including the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the field can serve an effective tool to control spin and valley properties of the 2D materials and be potentially exploited in optoelectronic applications.012064eninfo:eu-repo/semantics/openAccessElectromagnetic fields2D materialsElectronsSegulmagnRafeindirFloquet engineering of 2D materialsinfo:eu-repo/semantics/articleJournal of Physics: Conference Series10.1088/1742-6596/1461/1/012064