Háskóli ÍslandsUniversity of IcelandKhosa, Rabia YasminChen, J.T.Winters, M.Pálsson, KjartanKarhu, R.Hassan, J.Rorsman, N.Sveinbjörnsson, Einar2020-03-272020-03-272019-08-011369-8001https://hdl.handle.net/20.500.11815/1669Publisher's version (útgefin grein)We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.55-58eninfo:eu-repo/semantics/openAccessAl 2 O 3 /4H-SiC interfaceAlN/4H-SiC interfaceInterface trapsMIS structureRaffræðiRafeindafræðiinfo:eu-repo/semantics/articleMaterials Science in Semiconductor Processing10.1016/j.mssp.2019.03.025