Háskóli ÍslandsUniversity of IcelandKibis, OlegDini, Kevin Tanguy ElianIorsh, IvanShelykh, Ivan2019-03-062019-03-062017-03-01Kibis, O. V., Dini, K., Iorsh, I. V., & Shelykh, I. A. (2017). All-optical band engineering of gapped Dirac materials. Physical Review B, 95(12), 125401. doi:10.1103/PhysRevB.95.1254012469-99502469-9969 (eISSN)https://hdl.handle.net/20.500.11815/1037Publisher's version (útgefin grein)We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.125401eninfo:eu-repo/semantics/openAccessBand gapElectronic structureValleytronicsGrapheneTransition-metal dichalcogenideCondensed Matter & Materials PhysicsÞéttefnisfræðiRafeindirRafsegulfræðiinfo:eu-repo/semantics/articlePhysical Review B10.1103/PhysRevB.95.125401