Háskólinn í ReykjavíkReykjavik UniversityZajac, Joanna M.Sigurður Ingi Erlingsson2018-12-042018-12-042016-07-20Zajac, J. M., & Erlingsson, S. I. (2016). Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms. Physical Review B, 94(3), 035432. doi.org/10.1103/PhysRevB.94.0354322469-99502469-9969 (eISSN)https://hdl.handle.net/20.500.11815/937We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s=6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.035432/1-035432/7eninfo:eu-repo/semantics/openAccessFluorescenceThermal propertiesInterferometryFlúrljómunVarmafræðiMælitækiQuantom dotsinfo:eu-repo/semantics/articlePhysical Review B10.1103/PhysRevB.94.035432