Háskóli ÍslandsUniversity of IcelandKibis, O. V.Kyriienko, O.Shelykh, Ivan2021-01-142021-01-142020-03-23O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 0120631742-65881742-6596 (eISSN)https://hdl.handle.net/20.500.11815/2372Publisher's version (útgefin grein)It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion. Thus, the light-induced topological phase transition in the semiconductor appears. The structure of the found surface states is studied both analytically and numerically in the broad range of their parameters.012063eninfo:eu-repo/semantics/openAccessElectromagnetic fieldsMercury compoundsTopologyHgTeSegulmagnHálfleiðararinfo:eu-repo/semantics/articleJournal of Physics: Conference Series10.1088/1742-6596/1461/1/012063