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Fletta eftir efnisorði "Raffræði"

Fletta eftir efnisorði "Raffræði"

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    Calculations of Product Selectivity in Electrochemical CO2 Reduction 
    Hussain, Javed; Jónsson, Hannes; Skulason, Egill (American Chemical Society (ACS), 2018-04-23)
    CO2 can be reduced electrochemically to form valuable chemicals such as hydrocarbons and alcohols using copper electrodes, whereas the other metal electrodes tested so far mainly form CO or formate, or only the side product, H2. Accurate modeling of ...
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    Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC 
    Khosa, Rabia Yasmin; Þorsteinsson, Einar Baldur; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, Einar (AIP Publishing, 2018-02)
    We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune ...
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    Electrical characterization of gate dielectrics for 4H-SiC MOSFETs 
    Khosa, Rabia Yasmin (2017)
    Silicon is a semiconductor material used in most power devices and the Si metal-oxide-semiconductor field effect transistor (MOSFET) is the key switching device for high power applications. Recently silicon carbide (SiC) MOSFETs have emerged on the ...
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    Electrical characterization of high k-dielectrics for 4H-SiC MIS devices 
    Khosa, Rabia Yasmin; Chen, J.T.; Winters, M.; Pálsson, Kjartan; Karhu, R.; Hassan, J.; Rorsman, N.; Sveinbjörnsson, Einar (Elsevier BV, 2019-08-01)
    We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films ...
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    Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD 
    Khosa, Rabia Yasmin; Chen, J.T.; Pálsson, Kjartan; Karhu, R.; Hassan, J.; Rorsman, N.; Sveinbjörnsson, Einar (Elsevier BV, 2019-03)
    We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals ...