Electron-photonic topological states on the surface of a bulk semiconductor driven by a high-frequency field

Kibis, O. V.; Kyriienko, O.; Shelykh, Ivan

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dc.contributor	Háskóli Íslands
dc.contributor	University of Iceland
dc.contributor.author	Kibis, O. V.
dc.contributor.author	Kyriienko, O.
dc.contributor.author	orcid.org/0000-0001-5393-821X Shelykh, Ivan
dc.date.accessioned	2021-01-14T15:10:22Z
dc.date.available	2021-01-14T15:10:22Z
dc.date.issued	2020-03-23
dc.identifier.citation	O. V. Kibis et al 2020 Journal of Physics: Conference Series 1461 012063
dc.identifier.issn	1742-6588
dc.identifier.issn	1742-6596 (eISSN)
dc.identifier.uri	https://hdl.handle.net/20.500.11815/2372
dc.description	Publisher's version (útgefin grein)
dc.description.abstract	It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion. Thus, the light-induced topological phase transition in the semiconductor appears. The structure of the found surface states is studied both analytically and numerically in the broad range of their parameters.
dc.description.sponsorship	The work was partially supported by Russian Foundation for Basic Research (project 17-02-00053), Rannis project 163082-051, Ministry of Science and High Education of Russian Federation (projects 3.4573.2017/6.7, 3.8051.2017/8.9, 14.Y26.31.0015), and the Government of the Russian Federation through the ITMO Fellowship and Professorship Program.
dc.format.extent	012063
dc.language.iso	en
dc.publisher	IOP Publishing
dc.relation.ispartofseries	Journal of Physics: Conference Series;1461(1)
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Electromagnetic fields
dc.subject	Mercury compounds
dc.subject	Topology
dc.subject	HgTe
dc.subject	Segulmagn
dc.subject	Hálfleiðarar
dc.title	Electron-photonic topological states on the surface of a bulk semiconductor driven by a high-frequency field
dc.type	info:eu-repo/semantics/article
dcterms.license	Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distributionof this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.description.version	Peer Reviewed
dc.identifier.journal	Journal of Physics: Conference Series
dc.identifier.doi	10.1088/1742-6596/1461/1/012063
dc.relation.url	https://iopscience.iop.org/article/10.1088/1742-6596/1461/1/012063
dc.contributor.department	Raunvísindastofnun (HÍ)
dc.contributor.department	Science Institute (UI)
dc.contributor.school	Verkfræði- og náttúruvísindasvið (HÍ)
dc.contributor.school	School of Engineering and Natural Sciences (UI)