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Fletta eftir höfundi "Polozkov, R. G."

Fletta eftir höfundi "Polozkov, R. G."

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    Measurement of local optomechanical properties of a direct bandgap 2D semiconductor 
    Benimetskiy, F. A.; Sharov, V. A.; Alekseev, P. A.; Kravtsov, V.; Agapev, K. B.; Sinev, I. S.; Mukhin, I. S.; Catanzaro, A.; Polozkov, R. G.; Alexeev, E. M.; Tartakovskii, A. I.; Samusev, A. K.; Skolnick, M. S.; Krizhanovskii, D. N.; Shelykh, Ivan; Iorsh, I. V. (AIP Publishing, 2019-10-01)
    Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows inducing ...