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Fletta eftir höfundi "Iorsh, I. V."

Fletta eftir höfundi "Iorsh, I. V."

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    Floquet engineering of 2D materials 
    Kibis, O. V.; Iorsh, I. V.; Shelykh, Ivan (IOP Publishing, 2020-04-23)
    We demonstrate theoretically that the interaction of electrons in the 2D materials (gapped graphene and transition metal dichalchogenide monolayer) with a strong off-resonant electromagnetic field substantially renormalizes their band structure, including ...
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    Measurement of local optomechanical properties of a direct bandgap 2D semiconductor 
    Benimetskiy, F. A.; Sharov, V. A.; Alekseev, P. A.; Kravtsov, V.; Agapev, K. B.; Sinev, I. S.; Mukhin, I. S.; Catanzaro, A.; Polozkov, R. G.; Alexeev, E. M.; Tartakovskii, A. I.; Samusev, A. K.; Skolnick, M. S.; Krizhanovskii, D. N.; Shelykh, Ivan; Iorsh, I. V. (AIP Publishing, 2019-10-01)
    Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows inducing ...
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    Strong coupling of excitons in 2D MoSe2/hBN heterostructure with optical bound states in the continuum 
    Benimetskiy, F. A.; Kravtsov, V.; Khestanova, E.; Mukhin, I. S.; Sinev, I. S.; Samusev, A. K.; Shelykh, Ivan; Krizhanovskii, Dmitry N.; Skolnick, Maurice; Iorsh, I. V. (IOP Publishing, 2020-04-23)
    We experimentally demonstrate strong exciton-photon coupling in a MoSe2/hBN heterostructure interfaced with an all-dielectric metasurface supporting high-Q bound states in the continuum. The resulting exciton-polaritons are probed by means of temperature- ...