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Browsing by Author "Rorsman, N."

Browsing by Author "Rorsman, N."

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    Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC 
    Khosa, Rabia Yasmin; Þorsteinsson, Einar Baldur; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, Einar (AIP Publishing, 2018-02)
    We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune ...
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    Electrical characterization of high k-dielectrics for 4H-SiC MIS devices 
    Khosa, Rabia Yasmin; Chen, J.T.; Winters, M.; Pálsson, Kjartan; Karhu, R.; Hassan, J.; Rorsman, N.; Sveinbjörnsson, Einar (Elsevier BV, 2019-08-01)
    We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films ...
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    Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD 
    Khosa, Rabia Yasmin; Chen, J.T.; Pálsson, Kjartan; Karhu, R.; Hassan, J.; Rorsman, N.; Sveinbjörnsson, Einar (Elsevier BV, 2019-03)
    We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals ...